High temperature performance and operation of HFET's

IEEE Transactions on Electron Devices

Volumn 43, Issue 2, 1996, Pages 201-206

  Wilson, Craig D ^a   O'Neill, Anthony G ^b   Baier, Steven M ^c   Nohava, James C ^c  

^a Silvaco Data Systems Inc   (United States)

^b NEWCASTLE UNIVERSITY   (United Kingdom)

^c HONEYWELL TECHNOLOGY CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; HETEROJUNCTIONS; HIGH TEMPERATURE OPERATIONS; LEAKAGE CURRENTS; LOGIC CIRCUITS; PERFORMANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS;

ALUMINUM GALLIUM ARSENIDE; COMPLEMENTARY HETEROJUNCTION FIELD EFFECT TRANSISTOR; HIGH TEMPERATURE ELECTRONICS; INDIUM GALLIUM ARSENIDE;

FIELD EFFECT TRANSISTORS;

EID: 0030083148     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.481718     Document Type: Article

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