Improved ohmic contact on n-type 4H-SiC

Solid-State Electronics

Volumn 44, Issue 10, 2000, Pages 1875-1878

  Gao, Y ^a,b   Tang, Y ^a   Hoshi, M ^a,c   Chow, T P ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b TERADYNE INC   (United States)

^c NISSAN MOTOR CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; INTERFACES (MATERIALS); INTERMETALLICS; NICKEL; OHMIC CONTACTS; TITANIUM; X RAY DIFFRACTION ANALYSIS;

FOUR-POINT PROBE METHOD; SPECIFIC CONTACT RESISTIVITY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0034292263     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00099-X     Document Type: Article

References (7)

1. Kaplan R, Bermudez VM. In: Harris GL, editor. Properties of Silicon Carbide. EMIS Datareviews Series No. 13, INSPEC, 1995.
2. Hallin C., Yakimova R., Pecz B., Georgieva A., Marinova T.S., Kasamakova L., Kakanakov R., Janzen E. Improved Ni ohmic contact on N-type 4H-SiC. J Electron Mater. 26(3):1997;119-122.
3. Terry L.E., Wilson R.W. Proc IEEE. 57:1969;1580.
4. Kuphal E. Low resistance ohmic contacts to n- and p-InP. Solid-State Electron. 24:1981;69-78.
5. Madsen L.D., Svedberg E.B., Radamson H.H., Hallin C., Hjorvarsson B., Cabral Jr C., Jordan-Sweet J.L., Lavoie C. Phase formation sequence of nickel silicides from rapid thermal annealing of Ni on 4H-SiC. Mater Sci Forum. 264-268:1998;799-804.
6. Melloch M, Cooper J. MRS Bull 22, 1997. p. 43.
7. Williams J.R., Bozack M.J., Lsaccs-Smith T., Luckowski E.E., Meadows C., Crofton J., Mcmullin P.G. AIP Conf Porc. 325:1995;135.