Comparison of device performance and scaling capability of thin-body GOI and SOI MOSFETs

Semiconductor Science and Technology

Volumn 20, Issue 10, 2005, Pages 1034-1038

  An, Xia ^a   Huang, Ru ^a   Zhang, Xing ^a   Wang, Yangyuan ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; GATES (TRANSISTOR); GERMANIUM; LEAKAGE CURRENTS; SILICON ON INSULATOR TECHNOLOGY;

DEVICE PERFORMANCE; GERMANIUM-ON-INSULATOR (GOI); HIGH-PERFORMANCE LOGIC (HP) APPLICATIONS; SCALING CAPABILITY;

MOSFET DEVICES;

EID: 25444529430     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/10/009     Document Type: Article

References (23)

1. Frank D J, Dennard R H, Nowak E, Solomon P M, Taur Y and Wong H-S Philip 2001 Device scaling limits of Si MOSFETs and their application dependencies Proc. IEEE 89 259
2. Schulz T, Pacha C and Risch L 2002 Impact of technology parameters on inverter delay of UTB-SOI CMOS SOI Conference, IEEE International 2002 p 176
3. Choi Y-K, Asano K, Lindert N, Subramanian V, King T-J, Bokor J and Hu C 2000 Ultrathin-body SOI MOSFET for deep-sub-tenth micro era IEEE Electron Device Lett. 21 254
4. Esseni D, Mastrapasqua M, Celler G K, Baumann F H, Fiegna C, Selmi L and Sangiorgi E 2000 Low field mobility of ultrathin SOI n- and p-MOSFETs: measurements and implications on the performance of ultrashort MOSFETs IEDM Tech. Dig. p 671
5. Uchida K, Watanabe H, Kinoshita A, Koga J, Numata T and Takagi S 2002 Experimental study on carrier transport mechanism in ultrathin-body SOI n- and p-MOSFET's with SOI thickness less than 5 nm IEDM Tech. Dig. p 47
6. Ren Z, Solomon P M, Kanarsky T, Doris B, Dokumaci O, Oldiges P, Roy R A, Jones E C, Ieong M, Miller R J, Haensch W and Wong H-S P 2002 Examination of hole mobility in ultrathin body SOI MOSFETs IEDM Tech. Dig. p 51
7. Shang H, Lee K-L, Kozlowski P, D'Emic C, Babich I, Sikorski E, Ieong M, Wong H-S P, Guarini K and Haensch W 2004 Self-aligned n-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate IEEE Electron Device Lett. 25 135
8. Chui C O, Kim H, McIntye P C and Saraswat K C 2003 A germanium NMOSFET process integrating metal gate and improved high-κ dielectrics IEDM'03 p 437
9. Shang H, Okorn-Schimdt H, Ott J, Kozlowski P, Steen S, Jones E C, Wong S H-P and Hanesch W 2003 Electrical characterization of germanium p-channel MOSFETs IEEE Electron Device Lett. 24 242
10. Shang H, Okorn-Schimdt H, Chan K K, Copel M, Ott J, Kozlowski P and Steen S 2002 High mobility p-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric IEDM p 441
11. Chui C O, Kim H, Chi D, Triplett B B, McIntye P C and Saraswat K C 2002 A sub-400 °C germanium MOSFET technology with high-κ dielectric and metal gate IEDM p 437
12. 3-Ge-on-insulator n- and p-MOSFETs with fully NiSi and NiGe dual gates IEEE Electron Device Lett. 25 138
13. 3 gate dielectrics 2003 Symposium on VLSI Technology Digest of Technical Papers p 119
14. 3 Ge-on-insulator MOSFETs IEEE Device Research Conference p 39
15. Pop E, Chui C O, Sinhay S, Dutton R and Goodsony K 2004 Electro-thermal comparison and performance optimization of thin-body SOI and GOI MOSFETs IEDM'04 p 411
16. Trumbore F A 1960 Solid solubilities of impurity elements in germanium and silicon Bell Syst. Tech. J. p 205
17. Chui C O and Saraswat K C 2004 Advanced germanium MOSFET technologies with high-κ gate dielectrics and shallow junctions 2004 International Conference on Integrated Circuit Design and Technology ICICDT '04 p 245
18. Khakifirooz A and Antoniadis D A 2004 On the electron mobility in ultrathin SOI and GOI IEEE Electron Device Lett. 25 p 80
19. International Technology Roadmap for Semiconductors 2004 Semiconductor Industry Association
20. Sze S M 1985 Physics of Semiconductor Devices (New York: Wiley)
21. SOI-induced scattering IEDM'03 p 805
22. Uchida K, Hiroshi W, Koga J, Kinoshita A and Takagi S-I 2003 Experimental study on carrier transport mechanism in ultrathin-body SOI MOSFETs International Conference on Simulation of Semiconductor Processes and Devices SISPAD 2003 pp 8-13
23. Chang L, Tang S, King T-J, Bokor J and Hu C 2000 Gate length scaling and threshold voltage control of double-gate MOSFETs IEDM'00 p 719