Low defects and high quality Al2O3 Ge-on-insulator MOSFETs

Device Research Conference - Conference Digest, DRC

Volumn 2003-January, Issue , 2003, Pages 39-40

  Yu, D S ^a   Huang, C H ^a   Chin, A ^a   Chen, W J ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL FORMOSA UNIVERSITY   (Taiwan)

Author keywords

Breakdown voltage; Capacitance voltage characteristics; Dielectric breakdown; Etching; MOSFET circuits; Plasma applications; Plasma temperature; Wafer bonding

Indexed keywords

ALUMINA; ALUMINUM OXIDE; CAPACITANCE; ELECTRIC BREAKDOWN; ELECTRIC INSULATORS; ETCHING; GERMANIUM COMPOUNDS; HOLE MOBILITY; LEAKAGE CURRENTS; PLASMA APPLICATIONS; SILICA; WAFER BONDING;

CAPACITANCE VOLTAGE CHARACTERISTIC; CONTROL DEVICE; DISLOCATION FREE; GE ON INSULATORS; HIGH QUALITY; MOSFET CIRCUITS; P-MOSFETS; PLASMA TEMPERATURE;

MOSFET DEVICES;

EID: 84942605907     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2003.1226861     Document Type: Conference Paper

References (4)

1. B. H. Lee et al, IEDM Tech. Dig. (1999), p.133.
2. A. Chin et al, Symp. on VLSI Tech.(1999), p.135.
3. Y. H. Wu and A. Chin, IEEE EDL 21, p. 350 (2000).
4. Y. H. Wu et al, J. Electrochemical Soc.147, p. 2254 (2000).