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Volumn 284, Issue 1-2, 2005, Pages 28-38

Influence of growth parameters on the composition and impurity levels of intrinsically carbon doped AlxGa1-xAs

Author keywords

A1. Doping; A3. Metalorganic chemical vapor deposition; B1. Carbon; B1. Gallium compounds; B2. Semi conducting III V materials

Indexed keywords

CAPACITANCE; CARBON; CARRIER CONCENTRATION; COMPOSITION; CRYSTAL GROWTH; ELECTRIC POTENTIAL; GALLIUM COMPOUNDS; HYDROGEN; IMPURITIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING; TEMPERATURE DISTRIBUTION;

EID: 25144458124     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.07.001     Document Type: Article
Times cited : (6)

References (41)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.