Di-Carbon defects in annealed highly carbon doped GaAs

Physical Review Letters

Volumn 78, Issue 1, 1997, Pages 74-77

  Wagner, J ^a   Newman, R C ^b   Davidson, B R ^b   Westwater, S P ^c   Bullough, T J ^c   Joyce, T B ^c   Latham, C D ^d   Jones, R ^d   Oberg S ^e  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

^c UNIVERSITY OF LIVERPOOL   (United Kingdom)

^d UNIVERSITY OF EXETER   (United Kingdom)

^e LULEÅ UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3543065751     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.78.74     Document Type: Article

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