Effects of deposition temperature on the mechanical and physical properties of silicon nitride thin films

Journal of Applied Physics

Volumn 98, Issue 4, 2005, Pages

  Walmsley, B A ^a   Liu, Y ^a   Hu, X Z ^a   Bush, M B ^a   Winchester, K J ^a   Martyniuk, M ^a   Dell, J M ^a   Faraone, L ^a  

^a UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

BULK MICROMACHINING; DEPOSITION TEMPERATURE; MATERIAL DENSITY; SILICON NITRIDE THIN FILMS;

ATOMIC FORCE MICROSCOPY; CANTILEVER BEAMS; DEPOSITION; ELASTIC MODULI; MICROMACHINING; SILICON NITRIDE;

THIN FILMS;

EID: 25144433764     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2006972     Document Type: Article

References (26)

1. I. K. Han, Y. J. Lee, J. W. Jo, J. I. Lee, and K. N. Kang, Appl. Surf. Sci. 4849, 104 (1991).
2. W. C. Oliver and G. M. Pharr, J. Mater. Res. 7, 1564 (1992).
3. O. R. Shojaei and A. Karimi, Thin Solid Films 332, 202 (1998).
4. T. Tsuchiya, M. Shikida, and K. Sato, Sens. Actuators, A 97-98, 492 (2002).
5. J. N. Ding, Y. G. Meng, and S. Z. Wen, Mater. Sci. Eng., B 83, 42 (2001).
6. M. W. Pruessner, T. T. King, D. P. Kelly, R. Grover, L. C. Calhoun, and R. Ghodssi, Sens. Actuators, A 105, 190 (2003).
7. D. Son, J. Jeong, and D. Kwon, Thin Solid Films 437, 182 (2003).
8. P. G. Hartley, H. Thissen, T. Vaithianathan, and H. J. Griesser, Plasmas Polym. 5, 47 (2000).
9. R. Kazinczi, J. R. Mollinger, and A. Bossche, Sens. Actuators, A 85, 84 (2000).
10. P. M. Osterberg and S. D. Senturia, J. Microelectromech. Syst. 6, 107 (1997).
11. V. Ziebart, O. Paul, U. Munch, and H. Baltes, Mater. Res. Soc. Symp. Proc. 505, 27 (1998).
12. G. Z. Sauerbrey, Z. Phys. 155, 206 (1959).
13. H. Tsai and W. Fang, Sens. Actuators, A 103, 377 (2003).
14. S. E. Grillo, M. Ducarroir, M. Nadal, E. Tournie, and J.-P. Faurie, J. Phys. D 36, L5 (2003).
15. Y. Jung, B. R. Lawn, M. Martyniuk, H. Haung, and X. Z. Hu, J. Mater. Res. 19, 3076 (2004).
16. Engineered Materials Handbook: Ceramics and Glasses, edited by, S. J. Schneider, (ASM, Metals Park, OH, 1991), pp. 330, 677.
17. T. S. Hickernell, F. N. Fliegel, and F. S. Hickernell, Proc.-IEEE Ultrason. Symp. 1, 445 (1990).
18. W. S. Liao, C. H. Lin, and S. C. Lee, Appl. Phys. Lett. 65, 2229 (1994).
19. R. S. Besser, P. J. Louris, and R. G. Musket, J. Electrochem. Soc. 144, 2859 (1997).
20. M. T. K. Soh, N. Savvides, C. A. Musca, J. M. Dell, and L. Faraone, Proc. SPIE 5276, 434 (2004).
21. J. C. Bruyere, C. Savall, B. Reynes, M. Brunel, and L. Ortega, J. Phys. D 26, 713 (1993).
22. Y.-J. Yang, M.-A. Gretillat, and S. D. Senturia, Sol. St. Sens. Act. Proc. 2, 1093 (1997).
23. S. Suresh, T. G. Nieh, and B. W. Choi, Scr. Mater. 41, 951 (1999).
24. Y. C. Tai and R. S. Muller, IEEE MEMS 1, 147 (1990).
25. K. Petersen and C. R. Guarnieri, J. Appl. Phys. 50, 6761 (1979).
26. S. P. Baker and W. D. Nix, J. Mater. Res. 9, 3131 (1994).