Chemical etch rate of plasma-enhanced chemical vapor deposited SiO2 films: Effect of deposition parameters

Journal of the Electrochemical Society

Volumn 144, Issue 8, 1997, Pages 2859-2864

  Besser, R S ^a,b   Louris, P J ^a   Musket, R G ^c  

^a Candescent Technologies Corporation   (United States)

^b San Jose Christian College   (United States)

^c LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC BREAKDOWN; ELECTRIC INSULATING MATERIALS; ETCHING; PLASMA APPLICATIONS; POROSITY; REFRACTIVE INDEX; RESIDUAL STRESSES; SILICA; SUBSTRATES; THIN FILMS;

COMPRESSIVE STRESSES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD);

SEMICONDUCTING FILMS;

EID: 0031208461     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837908     Document Type: Article

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