Chemical structure of low-temperature plasma deposited silicon nitride thin films

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5276, Issue , 2004, Pages 434-441

  Soh, Martin T K ^a   Savvides, Nick ^b   Musca, Charles A ^a   Dell, John M ^a   Faraone, Lorenzo ^a  

^a UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

^b CSIRO   (Australia)

Author keywords

Dielectric function; Plasma CVD; Refractive index; Silicon compounds; Stoichiometry

Indexed keywords

ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; MICROELECTROMECHANICAL DEVICES; MICROMACHINING; REFRACTIVE INDEX; STOICHIOMETRY; STRUCTURE (COMPOSITION); THIN FILMS;

DIELECTRIC FUNCTION; PASSIVATION LAYERS; PLASMA CVD; RADIO FREQUENCY (RF) EXCITATION;

SILICON NITRIDE;

EID: 2442625381     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.523243     Document Type: Conference Paper

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