Monte Carlo Simulation of Noise in Electronic Devices: Limitations and Perspectives

AIP Conference Proceedings

Volumn 665, Issue , 2003, Pages 496-503

  Gonzalez T ^a   Mateos, J ^a   Martin Martinez M J ^a   Perez S ^a   Rengel, R ^a   Vasallo, B G ^a   Pardo, D ^a  

^a UNIVERSITY OF SALAMANCA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

INTELLIGENT SYSTEMS; THERMOELECTRIC EQUIPMENT;

ELECTRONICS DEVICES; MONTE CARLO TECHNIQUES; MONTE CARLO'S SIMULATION; NOISE ANALYSE;

MONTE CARLO METHODS;

EID: 24944576298     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.1584926     Document Type: Conference Paper

References (40)

1. L. Varani, L. Reggiani, T. Khun, T. González, and D. Pardo, IEEE Trans. Electron Devices 41,1916 (1994).
2. H. L. Hartnagel, R. Katilius, and A. Matulionis, Microwave Noise in Semiconductor Devices, Wiley-Interscience, New York, 2001.
3. P. Shiktorov, E. Starikov, V. Gruzinskis, T. González, J. Mateos, D. Pardo, L. Reggiani, L. Varani, and J. C. Vaissiere, Riv. Nuovo Cimento 24, 1 (2001).
4. F. Bonani and G. Ghione, Noise in Semiconductor Devices: Modelling and Simulation, Springer, Berlin, 2001.
5. L. Varani, T. Kuhn, L. Reggiani, and Y. Perlès, Solid-State Electron. 36, 251 (1993).
6. T. González, D. Pardo, L. Varani, and L. Reggiani, Appl. Phys. Lett. 63, 84 (1993).
7. J. G. Adams, T. W. Tang, and L. Kay, IEEE Trans. Electron Devices 41, 575 (1994).
8. T. González, D. Pardo, L. Varani, and L. Reggiani, J Appl. Phys. 82, 2349 (1997).
9. V. Gruzinskis, J. Liberis, A. Matulionis, P. Sakalas, E. Starikov, P. Shiktorov, B. Szentpali, V. Van Tuyen, and H. L. Hartnagel, Appl. Phys. Lett. 73, 2488 (1998).
10. M. J. Martín-Martínez, D. Pardo, and J. E. Velázquez, Appl. Phys. Lett. 71, 3382 (1997);
11. J. Appl. Phys. 84, 5012 (1998).
12. T. González, D. Pardo, L. Varani, and L. Reggiani, IEEE Trans. Electron Devices 42, 991 (1995).
13. J. Mateos, T. González, D. Pardo, P. Tadyszak, F. Daneville, and A. Cappy, Solid-State Electron. 39, 1629 (1996).
14. S. Babiker, A. Asenov, N. Cameron, S. Beaumont, and J. R. Barker, IEEE Trans. Electron Devices 45, 1644 (1998).
15. J. Mateos, T. González, D. Pardo, V. Hoel, and A. Cappy, IEEE Trans. Electron Devices 47, 1950 (2000).
16. R. Rengel, J. Mateos, D. Pardo, T. González, and M. J. Martín, Semicond. Sci. Technol. 16, 939 (2001).
17. M. J. Martín-Martínez, S. Pérez, D. Pardo, and T. González, J. Appl. Phys. 90, 1582 (2001);
18. Physica B 314, 381 (2002).
19. R. C. Liu, P. Eastman, and Y. Yamamoto, Solid State Commun. 102, 785 (1997).
20. T. González, C. González, J. Mateos, D. Pardo, L. Reggiani, O. M. Bulashenko, and J. M. Rubí, Phys. Rev. Lett. 80, 2901 (1998).
21. T. González, in Proc. of the 16th Int. Conf. on Noise in Physical Systems and 1/f fluctuations, edited by G. Bosman, World Scientific, Singapore, 2001, pp. 431-436.
22. C. Jungemann and B. Meinerzhagen, IEEE Trans. Electron Devices 48, 985 (2001).
23. C. Jungemann, B. Neinhüs, S. Decker, and B. Meinerzhagen, IEEE Trans. Electron Devices 49, 1250 (2002); ibid.49, 1258 (2002).
24. C. Moglestue, IEEE Trans. Electron Devices 32, 2092 (1985).
25. H. Kim, H. S. Min, T. W. Tang, and Y. J. Park, Solid-State Electron. 34, 1251 (1991).
26. V. Gruzinskis, S. Kersulis, and A. Reklaitis, Semicond. Sci. Technol. 6, 602 (1991).
27. P. D. Yoder, K. Gartner, U. Krumbein, and U. Fichtner, IEEE Trans. Comput.-Aided Des. 16, 1082 (1997).
28. W. H. Press, B. P. Flannery, S. A. Teulosky, and W. T. Vetterling, Numerical Recipes, Cambridge University Press, New York, 1992.
29. J. M. Miranda, J. L. Sebastián, and S. Munõz, Appl. Phys. Lett. 72, 238 (1998).
30. A. Pacelli and U. Ravaioli, Solid-State Electron. 41, 599 (1997).
31. M. J. Martín-Martínez, T. González, D. Pardo, and J. E. Velázquez, Semicond. Sci. Technol. 11, 380 (1996).
32. S. Pérez, T. González, S. Delage, and J. Obregon, J. Appl. Phys. 88, 800 (2000).
33. B. G. Vasallo, J. Mateos, D. Pardo, and T. González, Semicond. Sci. Technol. 17, 440 (2002).
34. S. D. Greaves and R. T. Unwin, Microwave Opt. Technol. Lett. 6 ,60 (1993).
35. F. Danneville, B. Tamen, A. Cappy, J. B. Juraver, O. Llopis, and J Grafeuil, Fluctuation Noise Lett. 1, L189 (2001).
36. P. Shiktorov, E. Starikov, V. Gruzinskis, L. Reggiani, L. Varani, and J. C. Vaissière, Appl. Phys. Lett. 80, 4759 (2002).
37. S. Pérez and T. González, Semicond. Sci. Technol. 17, 696 (2002).
38. I. Shorubalko, H. Q. Xu, I Maximov, P. Omling, L. Samuelson, and W. Seifert, Appl. Phys. Lett. 79, 1384 (2001).
39. T. González, J. Mateos, D. Pardo, L. Varani, and L. Reggiani, Semicond. Sci. Technol. 44, L37 (1999).
40. X. Oriols, F. Martín, and J. Suñé, Appl. Phys. Lett. 79, 1703 (2001)