Microscopic analysis of generation-recombination noise in semiconductors under dc and time-varying electric fields

Journal of Applied Physics

Volumn 88, Issue 2, 2000, Pages 800-807

  Perez S ^a   Gonzalez T ^a   Delage, S L ^b   Obregon, J ^c  

^a UNIVERSITY OF SALAMANCA   (Spain)

^b THALES   (France)

^c UNIVERSITY OF LIMOGES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000725459     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373739     Document Type: Article

References (27)

1. J. A. Copeland, IEEE Trans. Electron Devices ED-18, 50 (1971).
2. L. D. Yau and C. T. Sah, IEEE Trans. Electron Devices ED-16, 160 (1969).
3. A. Van der Ziel, Noise in Solid State Devices and Circuits (Wiley, New York, 1986).
4. D. Rigaud and M. Valenza, IEEE Trans. Electron Devices 41, 2076 (1994).
5. P. O. Lauritzen, Solid-State Electron. 8, 41 (1965).
6. M. N. Tutt, D. Pavlidis, A. Khatizadeh, and B. Bayraktaroglu, IEEE Trans. Microwave Theory Tech. 43, 1461 (1995).
7. H. Darabi and A. A. Abidi, IEEE J. Solid-State Circuits 33, 15 (2000).
8. J. Obregon, M. Prigent, J. C. Nallatamby, M. Camiade, D. Rigaud, and R. Quere, Workshop on Microwave Oscillators: 2000 IEEE MTT-S International Microwave Symposium, Boston, 2000 (to be published).
9. J. H. Lorteije and A. M. H. Hoppenbrowers, Philips Res. Rep. 26, 29 (1971).
10. F. N. Hooge, T. G. M. Kleinpenning, and L. K. J. Vandamme, Rep. Prog. Phys. 44, 31 (1981).
11. L. Varani, L. Reggiani, T. Kuhn, T. González, and D. Pardo, IEEE Trans. Electron Devices 41, 1916 (1994).
12. G. Hill, P. N. Robson, and W. Fawcett, J. Appl. Phys. 50, 356 (1979).
13. R. Fauquembergue, J. Zimmermann, A. Kaszynski, E. Constant, and J. P. Nougier, J. Appl. Phys. 51, 1065 (1980).
14. J. G. Adams, T.-W. Tang, and L. E. Kay, IEEE Trans. Electron Devices 41, 575 (1994).
15. T. González, D. Pardo, L. Varani, and L. Reggiani, IEEE Trans. Electron Devices 42, 991 (1995).
16. M. J. Martín, D. Pardo, and J. E. Velázquez, J. Appl. Phys. 84, 5012 (1998).
17. T. González, D. Pardo, L. Reggiani, and L. Varani, J. Appl. Phys. 82, 2349 (1997).
18. J. Mateos, T. González, D. Pardo, V. Hoel, and A. Cappy, Semicond. Sci. Technol. 14, 864 (1999).
19. M. Macucci, B. Pellegrini, P. Terreni, and L. Reggiani, J. Appl. Phys. 63, 5369 (1988).
20. T. Kuhn, L. Reggiani, L. Varani, and V. Mitin, Phys. Rev. B 42, 5702 (1990).
21. T. Kuhn, L. Reggiani, and L. Varani, Phys. Rev. B 42, 11133 (1990).
22. T. Kuhn, L. Reggiani, L. Varani, D. Gasquet, J. C. Vaissiere, and J. P. Nougier. Phys. Rev. B 44, 1074 (1991).
23. C. Jacoboni and P. Lugli, The Monte Carlo Method for Semiconductor Device Simulation (Springer, Berlin, 1989).
24. A. van der Ziel, Solid State Physical Electronics (Prentice-Hall, Englewood Cliffs, NJ, 1976).
25. L. Reggiani, T. Kuhn, and L. Varani, Appl. Phys. A: Solids Surf. 54, 411 (1992).
26. W. H. Press, B. P. Flannery, S. A. Teukolsky, and W. T. Vetterling, Numerical Recipes (Cambridge University Press, New York, 1992).
27. F. Kornil and K. Urba, Nonlinear and Parametric Circuits (Wiley, Chichester, 1988).