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Volumn 24, Issue 4, 2005, Pages 273-276

Low-frequency noise of Hg1-xCdxTe long-wave photovoltaic detector

Author keywords

Dark current; HgCdTe; Passivation; Photovoltaic detector; Reciprocal space map

Indexed keywords

DETECTORS; PASSIVATION; SEMICONDUCTOR LASERS; SIGNAL NOISE MEASUREMENT; ZINC SULFIDE;

EID: 24744448048     PISSN: 10019014     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (4)

References (14)
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    • Bae S H, Lee S J, Kim Y H, et al Analysis of 1/f noise in LWIR HgCdTe photodiodes [J] J. Electron. Mater., 2000, 29(6): 877-881.
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    • Bae, S.H.1    Lee, S.J.2    Kim, Y.H.3
  • 3
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    • Tunneling and 1/f noise in HgCdTe photodiodes
    • Nemirovsky Y, Unikovsky A. Tunneling and 1/f noise in HgCdTe photodiodes [J]. J. Vac. Sci. Technol. B., 1992, 10(40): 1602-1610.
    • (1992) J. Vac. Sci. Technol. B. , vol.10 , Issue.40 , pp. 1602-1610
    • Nemirovsky, Y.1    Unikovsky, A.2
  • 5
    • 0036638201 scopus 로고    scopus 로고
    • Passivation effect on reactive-ion-etch-formed n-on-p junctions in HgCdTe
    • White J K, Antoszewski J, Pal R, et al. Passivation effect on reactive-ion-etch-formed n-on-p junctions in HgCdTe [J]. J. Electron. Mater., 2002, 31(7): 743-748.
    • (2002) J. Electron. Mater. , vol.31 , Issue.7 , pp. 743-748
    • White, J.K.1    Antoszewski, J.2    Pal, R.3
  • 8
    • 0033717955 scopus 로고    scopus 로고
    • xTe mid-wavelength infrared photovoltaic detectors based on n-on-p junction formed by plasma-induced type conversion
    • xTe mid-wavelength infrared photovoltaic detectors based on n-on-p junction formed by plasma-induced type conversion [J]. J. Crystal Growth, 2000, 214/215: 1106-1110.
    • (2000) J. Crystal Growth , vol.214-215 , pp. 1106-1110
    • Rais, M.H.1    Musca, C.A.2    Antoszewski, J.3
  • 10
    • 0033883935 scopus 로고    scopus 로고
    • Dislocation densities in InP single crystals grown under controlled phosphorous vapor pressure by the horizontal Bridgman method
    • Atsushi Shimizu, Jun-Ichi Nishizawa, Yutaka Oyama, et al. Dislocation densities in InP single crystals grown under controlled phosphorous vapor pressure by the horizontal Bridgman method [J]. J. Crystal Growth, 2000, 209: 21-26.
    • (2000) J. Crystal Growth , vol.209 , pp. 21-26
    • Shimizu, A.1    Nishizawa, J.-I.2    Oyama, Y.3
  • 13
    • 19944376452 scopus 로고    scopus 로고
    • Strain and relaxation of MBE-HgCdTe films
    • FANG Wei-Zheng, WANG Yuan-Zhang, WU Yan, et al. Strain and relaxation of MBE-HgCdTe films [J]. J. Infrared Millim. Waves, 2004, 23(5): 325-328.
    • (2004) J. Infrared Millim. Waves , vol.23 , Issue.5 , pp. 325-328
    • Fang, W.-Z.1    Wang, Y.-Z.2    Wu, Y.3
  • 14
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    • Study of dark current for mercury cadmium HgCdTe long-wavelength photodiode detector with different structures
    • YE Zhen-Hua, HU Xiao-Ning, ZHANG Hai-Yan, et al Study of dark current for mercury cadmium HgCdTe long-wavelength photodiode detector with different structures [J]. J. Infrared Millim. Waves, 2004, 23(2): 86-90.
    • (2004) J. Infrared Millim. Waves , vol.23 , Issue.2 , pp. 86-90
    • Ye, Z.-H.1    Hu, X.-N.2    Zhang, H.-Y.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.