Comparison of physical passivation of Hg1-xCdxTe

Journal of Crystal Growth

Volumn 214, Issue , 2000, Pages 265-268

  Sang, Wenbin ^a   Ju, Jianhua ^a   Shi, Weiming ^a   Qian, Yongbiao ^c   Linjun, Wang ^a   Xia, Yiben ^a   Wu, Wenhai ^a   Fang, Jiaxiong ^b   Li, Yanjin ^b   Zhao, Jun ^b   Gong, Haimei ^b  

^a SHANGHAI UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CARRIER CONCENTRATION; DIFFUSION; INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); LASER ABLATION; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SPUTTERING; ZINC SULFIDE;

DIAMOND LIKE CARBON FILM; ELECTRON BEAM VAPORIZATION; MERCURY CADMIUM TELLURIDE; PULSED LASER DEPOSITION; RADIO FREQUENCY PLASMA CHEMICAL VAPOR DEPOSITION;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0033700847     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00085-3     Document Type: Article

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