Dislocation densities in InP single crystals grown under controlled phosphorus vapor pressure by the horizontal Bridgman method

Journal of Crystal Growth

Volumn 209, Issue 1, 2000, Pages 21-26

  Shimizu, Atsushi ^a   Nishizawa, Jun ichi ^a,b   Oyama, Yutaka ^a,b,c   Suto, Ken ^a,b,c  

^a Telecommunications Advancement Organization of Japan   (Japan)

^b SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); PHOSPHORUS; SINGLE CRYSTALS; STOICHIOMETRY; VAPOR PRESSURE; X RAY CRYSTALLOGRAPHY;

BRIDGMAN METHOD;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0033883935     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00538-2     Document Type: Article

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