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Volumn 23, Issue 6, 2004, Pages 469-472

Study on the passivation of Hg1-xCdxTe photovoltaic detectors

Author keywords

CdTe; HgCdTe; Passivation; Reciprocal space mapping (RSM); ZnS

Indexed keywords

CRYSTALLIZATION; EPITAXIAL GROWTH; FILM GROWTH; HEAT TREATMENT; PASSIVATION; X RAY DIFFRACTION;

EID: 12444326173     PISSN: 10019014     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (2)

References (7)
  • 1
    • 0000938565 scopus 로고    scopus 로고
    • Key performance-limiting defects in P-on-N HgCdTe LPE heterojunction infrared photodiodes
    • Chen M C, List R S, Chandra D, et al. Key performance-limiting defects in P-on-N HgCdTe LPE heterojunction infrared photodiodes [J]. J. Electron. Mater, 1996, 25(8): 1375-1382.
    • (1996) J. Electron. Mater , vol.25 , Issue.8 , pp. 1375-1382
    • Chen, M.C.1    List, R.S.2    Chandra, D.3
  • 3
    • 0031122667 scopus 로고    scopus 로고
    • Analysis of the idealith factor in surface leaky HgCdTe photodiodes for the long-wavelength infrared region
    • Bhan R K, Koul S K, Basu P K. Analysis of the idealith factor in surface leaky HgCdTe photodiodes for the long-wavelength infrared region [J]. Semiconductor Sci. and Tech., 1997, 12: 448-454.
    • (1997) Semiconductor Sci. and Tech. , vol.12 , pp. 448-454
    • Bhan, R.K.1    Koul, S.K.2    Basu, P.K.3
  • 6
    • 0035398917 scopus 로고    scopus 로고
    • X-ray reciprocal space mapping studies of strain relaxation in thin SiGe layers (≤100 mm) using a low temperature growth step
    • Ni W X, Lyytovich K, Alami J, et al. X-ray reciprocal space mapping studies of strain relaxation in thin SiGe layers (≤100 mm) using a low temperature growth step [J]. J. Crystal Growth, 2001, 227/228: 756-760.
    • (2001) J. Crystal Growth , vol.227-228 , pp. 756-760
    • Ni, W.X.1    Lyytovich, K.2    Alami, J.3
  • 7
    • 0036638201 scopus 로고    scopus 로고
    • Passivation effect on reactive-lon-eteh-formed n-on-p Junctions in HgCdTe
    • White J K, Antoszewski, Pal R, et al. Passivation effect on reactive-lon-eteh-formed n-on-p Junctions in HgCdTe. [J] J. Electron. Mater, 2002, 31(7): 743-748.
    • (2002) J. Electron. Mater , vol.31 , Issue.7 , pp. 743-748
    • White, J.K.1    Antoszewski2    Pal, R.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.