Noise properties of linear defects in Hg1-xCdxTe

Journal of Electronic Materials

Volumn 31, Issue 8, 2002, Pages 831-833

  Virt, I S ^a   Obermayr, W ^b   Bilyk, M ^a   Kuzma, M ^c  

^a DROHOBYCH IVAN FRANKO STATE PEDAGOGICAL UNIVERSITY   (Ukraine)

^b Technikum Joanneum GmbH   (Austria)

^c UNIVERSITY OF RZESZÓW   (Poland)

Author keywords

1 f noise; Dislocations; HgCdTe; Infrared photodiode

Indexed keywords

ANNEALING; BORON; CRYSTALS; CURRENT VOLTAGE CHARACTERISTICS; DISLOCATIONS (CRYSTALS); ION IMPLANTATION; IONIZING RADIATION; PLASTIC DEFORMATION; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SPURIOUS SIGNAL NOISE; THERMAL EFFECTS;

CADMIUM MERCURY TELLURIUM; GENERATION-RECOMBINATION NOISE;

MERCURY COMPOUNDS;

EID: 0036687877     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0191-7     Document Type: Article

References (19)