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Volumn 23, Issue 5, 2004, Pages

Strain and relaxation of MBE-HgCdTe films

Author keywords

Cd1 yZnyTe substrate; FWHM; HgCdTe; Misfit dislocation; Reciprocal lattice mapping

Indexed keywords

EPITAXIAL GROWTH; INFRARED DETECTORS; STRAIN; STRESS RELAXATION; X RAY DIFFRACTION;

EID: 19944376452     PISSN: 10019014     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (2)

References (7)
  • 1
    • 0035359561 scopus 로고    scopus 로고
    • Fabrication of high-performance large-format MWIR focal plane arrays from MBE-Grown HgCdTe on 4″ silicon substrates
    • Varesi J, B, Bornfreund R E, Childs A C, et al. Fabrication of high-performance large-format MWIR focal plane arrays from MBE-Grown HgCdTe on 4″ silicon substrates [J]. Journal of Electronic Materials, 2001, 30: 566-573.
    • (2001) Journal of Electronic Materials , vol.30 , pp. 566-573
    • Varesi, J.B.1    Bornfreund, R.E.2    Childs, A.C.3
  • 3
    • 0033719938 scopus 로고    scopus 로고
    • Shear deformation and strain relaxation in HgCdTe on (211) CdZnTe
    • Lam T T. Shear deformation and strain relaxation in HgCdTe on (211) CdZnTe [J]. Journal of Electronic Materials, 2000, 29: 804-808.
    • (2000) Journal of Electronic Materials , vol.29 , pp. 804-808
    • Lam, T.T.1
  • 4
    • 33644667395 scopus 로고
    • X-ray double-crystal diffractometry of Gal-xAlxAs epitaxial layers
    • Bartels W J, Nijman W. X-ray double-crystal diffractometry of Gal-xAlxAs epitaxial layers [J]. Journal of Crystal Growth, 1978, 44: 518-525.
    • (1978) Journal of Crystal Growth , vol.44 , pp. 518-525
    • Bartels, W.J.1    Nijman, W.2
  • 7
    • 0016102155 scopus 로고
    • Structure of vapor-deposited GaxAll-xAs crystals
    • Nagai H. Structure of vapor-deposited GaxAll-xAs crystals [J]. Journal of Applied Physics, 1974, 45: 3789-3794.
    • (1974) Journal of Applied Physics , vol.45 , pp. 3789-3794
    • Nagai, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.