Metal deposition into a porous silicon layer by immersion plating: Influence of halogen ions

Journal of Applied Physics

Volumn 83, Issue 8, 1998, Pages 4501-4506

  Tsuboi, Takashi ^a   Sakka, Tetsuo ^a   Ogata, Yukio H ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000092774     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367212     Document Type: Article

References (19)

1. A. Uhlir, Bell Syst. Tech. J. 35, 333 (1956).
2. P. C. Searson, in Advances in Electrochemical Science and Engineering, edited by H. Gerischer and C. W. Tobis (VCH, Weinheim, 1995), Vol. 4.
3. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
4. A. Halimaoui, C. Oules, G. Bromchil, A. Bsiesy, F. Gaspard, R. Herino, M. Ligeon, and F. Muller, Appl. Phys. Lett. 59, 304 (1991).
5. M. Jeske, J. W. Schultze, M. Thönissen, and H. Münder, Thin Solid Films 255, 63 (1995).
6. D. Andsager, J. Hilliard, L. H. Abu Hassen, M. Plisch, and M. H. Nayfeh, J. Appl. Phys. 74, 4783 (1993).
7. D. Andsager, J. Hilliard, and M. H. Nayfeh, Appl. Phys. Lett. 64, 1141 (1994).
8. J. Hilliard, D. Andsager, L. Abu Hassen, H. M. Nayfeh, and M. H. Nayfeh, J. Appl. Phys. 76, 2423 (1994).
9. J. E. Hilliard, H. M. Nayfeh, and M. H. Nayfeh, J. Appl. Phys. 77, 4130 (1995).
10. A. G. Cullis and L. T. Canham, Nature (London) 353, 335 (1991).
11. J. O'M. Bockris and A. K. N. Reddy, in Modern Electrochemistry (Plenum, New York, 1970), Vol. 2.
12. Y. Ogata, H. Niki, T. Sakka, and M. Iwasaki, J. Electrochem. Soc. 142, 195 (1995).
13. Y. Ogata, H. Niki, T. Sakka, and M. Iwasaki, J. Electrochem. Soc. 142, 1595 (1995).
14. G. W. Trucks, K. Raghavachari, G. S. Higashi, and Y. J. Chabal, Phys. Rev. Lett. 65, 504 (1990).
15. C. D. Wagner, W. M. Riggs, L. E. Davis, J. F. Moulder, and G. E. Mullenberg, Handbook of X-Ray Photoelectron Spectroscopy, Physical Electronics Division (Perkin-Elmer, Eden Prairie, MN, 1979).
16. T. Unagami, J. Electrochem. Soc. 127, 476 (1980).
17. R. C. Anderson, R. S. Muller, and C. W. Tobias, J. Electrochem. Soc. 138, 3406 (1991).
18. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
19. N. Rigakis, J. Hilliard, L. Abu Hassen, J. M. Hetrick, D. Andsager, and M. H. Nayfeh, J. Appl. Phys. 81, 440 (1997).