Atomic layer deposition (ALD) of TiO2 and Al2O 3 thin films on silicon

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5276, Issue , 2004, Pages 296-306

  Mitchell, D R G ^a   Triani, G ^a   Attard, D J ^a   Finnie, K S ^a   Evans, P J ^a   Barbe C J ^a   Bartlett, J R ^a  

^a AUSTRALIAN NUCLEAR SCIENCE AND TECHNOLOGY ORGANISATION   (Australia)

Author keywords

Al 2O3; Atomic layer deposition (ALD); Nanolaminates; TEM; TiO2

Indexed keywords

ALUMINA; COATINGS; CONDENSATION; DEPOSITION; ELLIPSOMETRY; OPTICAL FILTERS; POLYMERS; REFLECTION; REFRACTIVE INDEX; SECONDARY ION MASS SPECTROMETRY; THIN FILMS; TITANIUM DIOXIDE; TRANSMISSION ELECTRON MICROSCOPY;

AL2O3; ATOMIC LAYER DEPOSITION (ALD); NANOLAMINATES; TIO2;

SILICON;

EID: 2442703199     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.531795     Document Type: Conference Paper

References (17)

1. T. Suntola, J. Anstson, US Patent No. 405430, 1975.
2. M. Ritala, M. Leskelä, "Atomic layer epitaxy - a valuable tool for nanotechnology?", Nanotechnology, 10, 19-24, 1999.
3. M. Ritala, K. Kukli, A. Rahtu, P. Räisänen, M. Leskelä, T. Sajavaara, J. Keinonen, "Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen Sources", Science, 288, 5464, 319-321, 2000.
4. K. Kukli, M. Ritala, M. Leskelä. "Atomic layer deposition and chemical vapor deposition of tantalum oxide by successive and simultaneous pulsing of tantalum ethoxide and tantalum chloride", Chem. Mat., 12, 1914-1920, 2000.
5. 2/Si", Thin Solid Films, 428, 190-194, 2003.
6. O. Sneh, R. B. Clark-Phelps, A. R. Londergan, J. Winkler, T. E. Seidel, "Thin film atomic layer deposition equipment for semiconductor processing", Thin Solid Films, 402, 248-261, 2002.
7. 5 nanolaminates", J. Appl. Phys., 86, 5656-5662, 1999.
8. D. Riihelä, M. Ritala, R. Matero, M. Leskelä, "Introducing atomic layer epitaxy for the deposition of optical thin films", Thin Solid Films, 289, 250-255, 1996.
9. 2 films grown on silicon", Thin Solid Films, 441, 85-95, 2003.
10. 2 min films", Appl. Surf. Sci., 181, 339-348, 2001.
11. 2-II thin films in atomic layer deposition process", J. Cryst. Growth, 181, 259-264, 1997.
12. G. J. Exarhos, N. J. Hess, S. Wood, "Transient stress evolution and crystallisation in laser-irradiated amorphous titania sol-gel films", Proc. SPIE-Int. Opt. Eng., 1624, 444-456, 1992.
13. 2O: investigation of growth mechanism", Appl. Surf. Sci., 172, 148-158, 2001.
14. T. Junghanns, H. Hofmeister, "The effect of substrate conditions on the formation of crystalline particles in amorphous germanium films", Mat. Sci. Forum, 113-115, 637-642, 1993.
15. D. M. Hausmann, R. G. Gordon, "Surface morphology and crystallinity control in the atomic layer deposition (ALD) of hafnium and zirconium oxide thin films", J. Cryst. Growth, 249, 251-261, 2003.
16. 2 films grown by atomic layer deposition", Thin Solid Films, 305, 270-273, 1997.
17. W. Kern, D. A. Puotinen, "Cleaning solutions based on hydrogen for use in silicon semiconductor technology", RCA Rev., 31, 187-206, 1970.