Nitride-based HFETs with carrier confinement layers

Materials Science and Engineering: B

Volumn 110, Issue 2, 2004, Pages 172-176

  Su, Y K ^a   Chang, S J ^a   Kuan, T M ^a   Ko, C H ^a   Webb, J B ^b   Lan, W H ^c   Cherng, Y T ^d   Chen, S C ^e  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c NATIONAL UNIVERSITY OF KAOHSIUNG   (Taiwan)

^d CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

^e NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

AFM; Carrier confinement; GaN; HFET

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER MOBILITY; ELECTRIC CURRENTS; ELECTRON GAS; HETEROJUNCTIONS; INDUCTIVELY COUPLED PLASMA; INSULATION; NUCLEATION; SUBSTRATES;

CARRIER CONFINEMENT; HEFT; SEMI INSULATING;

FIELD EFFECT TRANSISTORS;

EID: 2442693168     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.02.015     Document Type: Article

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