Implications of spontaneous polarization effects for carrier transport measurements in GaN

Semiconductor Science and Technology

Volumn 15, Issue 4, 2000, Pages 413-417

  Harris, J J ^a   Lee, Kj ^a   Webb, J B ^b   Tang, H ^b   Harrison, I ^c   Flannery, L B ^c   Cheng, T S ^c   Foxon, C T ^c  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; FILM GROWTH; HALL EFFECT; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING;

SPONTANEOUS POLARIZATION EFFECTS;

SEMICONDUCTING FILMS;

EID: 0033906617     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/4/319     Document Type: Article

References (9)

1. Leszczynski M, Teysseyre H, Suski T, Grzegory I, Bockowski M, Sun J J, Porowski S, Pakula K, Baranowski J M, Foxon C T and Cheng TS 1996 Appl. Phys. Lett. 69 73
2. Bernardini F, Fiorentini V and Vanderbilt D 1997 Phys. Rev. B 56 R10024
3. Della Salla F, Di Carlo A, Lugli P, Bernardini F, Fiorentini V, Scholz R and Jancu J-M 1999 Appl. Phys. Lett. 74 2002
4. Asbeck P M, Yu E T, Lau S S, Sullivan G J, van Hove J and Redwing J 1997 Electron. Lett. 33 1230
5. Look D C and Molnar R J 1997 Appl. Phys. Lett. 70 3377
6. Petritz R L 1958 Phys. Rev. 110 1254
7. Kane M J, Apsley N, Anderson D A, Taylor L L and Kerr T 1985 J. Phys. C: Solid State Phys. 18 5629
8. Molnar R, Lei T and Moustakas T D 1993 Appl. Phys. Lett. 62 72
9. Harris J J, Lee K J, Harrison I, Flannery L B, Korakakis D, Cheng T S, Foxon C T, Bougrioua Z, Moerman I, Van der Stricht W, Thrush E J, Hamilton B and Ferhah K 1999 Phys. Status Solidi a 176 363