Correlations between spatially resolved Raman shifts and dislocation density in GaN films

Applied Physics Letters

Volumn 80, Issue 8, 2002, Pages 1355-1357

  Nootz, G ^a   Schulte, A ^a   Chernyak, L ^a   Osinsky, A ^b   Jasinski, J ^c   Benamara, M ^c   Liliental Weber, Z ^c  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b Corning Applied Technologies ^*  (United States)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION DENSITIES; GAN FILM; HYDRIDE VAPOR PHASE EPITAXY; RAMAN SHIFT; SAPPHIRE SUBSTRATES; SPATIALLY RESOLVED; TRANSVERSE OPTICAL; WAVE NUMBERS;

GALLIUM NITRIDE; LATTICE MISMATCH; SAPPHIRE;

INTERFACES (MATERIALS);

EID: 79956059151     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1449523     Document Type: Article

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