Structural and optical properties of indium nitride grown by plasma assisted molecular beam epitaxy

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5277, Issue , 2004, Pages 90-98

  Anderson, P A ^a   Lee, T E ^a   Kendrick, C E ^a   Diehl, W ^a   Kinsey, R J ^a   Kennedy, V J ^b   Markwitz, A ^b   Reeves, R J ^a   Durbin, S M ^a  

^a UNIVERSITY OF CANTERBURY   (New Zealand)

^b GNS SCIENCE   (New Zealand)

Author keywords

Indium nitride; InN; PAMBE; Plasma assisted molecular beam epitaxy

Indexed keywords

LIGHT EMITTING DIODES; LUMINESCENCE; MOLECULAR BEAM EPITAXY; MORPHOLOGY; OXYGEN; POLYCRYSTALLINE MATERIALS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SILICA; SINGLE CRYSTALS;

INDIUM NITRIDE; INN; PAMBE; PLASMA ASSISTED MOLECULAR BEAM EPITAXY;

INDIUM COMPOUNDS;

EID: 2442516110     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.522852     Document Type: Conference Paper

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