Ab-initio coulomb scattering in atomistic device simulation

VLSI Design

Volumn 8, Issue 1-4, 1998, Pages 331-335

  Arokianathan, C R ^a   Davies, J H ^a   Asenov, A ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Discrete charges; Mobility; Monte Carlo; Numerical simulation; Semiconductors

Indexed keywords

BROWNIAN MOVEMENT; CARRIER MOBILITY; CHARGE CARRIERS; COMPUTER SIMULATION; EQUATIONS OF MOTION; INTEGRATION; MONTE CARLO METHODS; PHONONS; SEMICONDUCTOR DOPING;

COULOMB POTENTIAL; POISSON'S EQUATION;

SEMICONDUCTOR DEVICES;

EID: 0032307411     PISSN: 1065514X     EISSN: None     Source Type: Journal    
DOI: 10.1155/1998/76027     Document Type: Article

References (5)

1. Wong, H.-S. and Taur, Y. (1993). "Three-dimensional 'atomistic' simulation of discrete random dopant distribution effects in sub-0.1 μm MOSFETs", IEDM Tech. Digest, 705-708.
2. Ferry, D. K., Kriman, A. M., Kann, M. J. and Joshi, R. P. (1991). "Molecular dynamics extension of Monte Carlo simulation in semiconductor device modeling", Computer Physics Communication, 67, 119-134.
3. Tarnay, K., Masszi, F., Poppe, A., Verhas, P., Kocsis, T. and Kohari, Z. (1993). "A 3D Monte Carlo semiconductor device simulator for submicron MOS transistors", Software Applications in Engineering, CH-46, 345-358.
4. Adams, D. J. and Dobey, G. (1987). J. Comp. Physics, 72, 156.
5. Arokianathan, C. R., Asenov, A. and Davies, J. H. (1996). "An approach based on Brownian motion for the simulation of ultrasmall semiconductor devices", J. Applied Physics, 80(1), 1-7.