Resonant tunneling properties of single electron transistors with a novel double-gate geometry

Applied Physics Letters

Volumn 68, Issue 4, 1996, Pages 526-528

  Fujisawa, Toshimasa ^a   Tarucha, Seigo ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001554143     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116388     Document Type: Review

References (7)

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