High current effects in double heterojunction bipolar transistors

Semiconductor Science and Technology

Volumn 20, Issue 5, 2005, Pages 412-417

  Yee, Marcus ^a   Houston, Peter A ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC CURRENTS; FREQUENCIES; SEMICONDUCTOR MATERIALS;

CURRENT SPREADING EFFECT; ELECTRON BARRIER FORMATION; KIRK EFFECT; POWER CONSTRAINT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 24144455641     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/5/015     Document Type: Article

References (19)

1. Chen P F, Hsin Y M, Welty R J, Asbeck P M, Pierson R L, Zampardi P J, Ho W J, Ho M C and Chang M F 1999 Application of GaInP/GaAs DHBT's to power amplifiers for wireless communications IEEE Trans. Microw. Theory Tech. 47 1433
2. Harame D L, Comfort J H, Cressler J D, Crabbé E F, Sun J Y C, Meyerson B S and Tice T 1995 Si/SiGe epitaxial-base transistors: part I. Materials, physics and circuits IEEE Trans. Electron Devices 42 455
3. Cressler J D 1998 SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications IEEE Trans. Electron Devices 46 572
4. Bolognesi C R, Matine N, Dvorak M W, Yeo P, Xu X G and Watkins S P 2001 InP/GaAsSb/InP double HBTs: a new alternative for InP-based DHBTs IEEE Trans. Electron Devices 48 2631
5. l-x/Si HBT's IEEE Electron Device Lett. 11 431
6. Mazhari B and Morkoc H. 1991 Effect of collector-base valence-band discontinuity on Kirk effect in double-heterojunction bipolar transistors Appl. Phys. Lett. 59 2162
7. Roenker K P and Mushini P 2000 Dynamic formation of a parasitic barrier to electron flow in Side HBTs operating at high current densities Microelectron. J. 31 353
8. Briggs P J, Walker A B and Herbert D C 1998 Modelling the influence of high currents on the cutoff frequency in Si/SiGe/Si heterojunction transistors Semicond. Sci. Technol. 13 468
9. Joseph A J, Cressler J D, Richey D M and Niu G 1999 Optimization of SiGe HBT's for operation at high current density IEEE Trans. Electron Devices 46 1347
10. Mushini P and Roenker K P 2000 Simulation study of high injection effects and parasitic barrier formation in SiGe HBTs operating at high current densities Solid-State Electron. 44 2239
11. T) fall-off at high current densities IEEE Trans. Electron Devices 9 164
12. Yee M, Houston P A and David J P R 2002 Measurement of electron saturation velocity in GaInP in a double heterojunction bipolar transistor J. Appl. Phys. 91 1601
13. Lye B C, Houston P A, Yow H K and Button C C 1998 GaInP/AlGaAs/GaInP double heterojunction bipolar transistors with zero conduction band spike at the collector IEEE Trans. Electron Devices 45 2417
14. y/p- Si(100) by heterojunction internal photoemission Appl. Phys. Lett. 73 3568
15. 0.5P from capacitance-voltage analysis Appl. Phys. Lett. 68 3488
16. Bhat R, Hong W P, Caneau C, Koza M A, Nguyen C K and Goswami S 1996 InP/GaAsSb/InP and InP/GaAsSb/InGaAsP double heterojunction bipolar transistors with a carbon-doped base grown by organometallic chemical vapor deposition Appl. Phys. Lett. 68 985
17. McDermott B T, Gertner E R, Oittman S, Seabury C W and Chang M F 1996 Growth and doping of GaAsSb via metalorganic chemical vapor deposition for InP heterojunction bipolar transistors Appl. Phys. Lett. 68 1386
18. Belhaj M, Maneux C, Labat N, Touboul A and Bove P 2003 High current effects in InP/GaAsSb/InP DHBT: physical mechanisms and parasitic effects Microelectron. Reliab. 43 1731
19. CEO ≥ 6 V IEEE Electron Device Lett. 22 361