Band line-up transition in AlxGa1-xAs/In0.5Ga0.5P from capacitance-voltage analysis

Applied Physics Letters

Volumn 68, Issue 24, 1996, Pages 3488-3490

  Kim, Il Jong ^a   Cho, Yong Hoon ^a   Kim, Kwan Shik ^a   Choe, Byung Doo ^a   Lim, H ^b  

^a Seoul National University   (South Korea)

^b Ajou University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; BAND STRUCTURE; CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; COMPOSITION; ENERGY GAP; LIQUID PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; VOLTAGE MEASUREMENT;

ALUMINUM GALLIUM ARSENIDE; BAND LINE UP; CAPACITANCE VOLTAGE CHARACTERISTICS; CONDUCTION BAND DISCONTINUITY; INDIUM GALLIUM PHOSPHIDE;

HETEROJUNCTIONS;

EID: 0030169727     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115767     Document Type: Article

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