Growth and doping of GaAsSb via metalorganic chemical vapor deposition for InP heterojunction bipolar transistors

Applied Physics Letters

Volumn 68, Issue 10, 1996, Pages 1386-1388

  McDermott, B T ^a   Gertner, E R ^a   Pittman, S ^a   Seabury, C W ^a   Chang, M F ^a  

^a ROCKWELL SCIENCE CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000392808     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116088     Document Type: Article

References (9)

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