Direct optical measurement of the valence band offset of p+ Si1-x-yGexCy/p- Si(100) by heterojunction internal photoemission

Applied Physics Letters

Volumn 73, Issue 24, 1998, Pages 3568-3570

  Chang, C L ^a   Rokhinson, L P ^a   Sturm, J C ^a  

^a Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0008235371     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122809     Document Type: Article

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