InP/GaAsSb/InP and InP/GaAsSb/InGaAsP double heterojunction bipolar transistors with a carbon-doped base grown by organometallic chemical vapor deposition

Applied Physics Letters

Volumn 68, Issue 7, 1996, Pages 985-987

  Bhat, R ^a   Hong, W P ^a   Caneau, C ^a   Koza, M A ^a   Nguyen, C K ^a   Goswami, S ^a  

^a TELCORDIA TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038650854     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116120     Document Type: Article

References (14)

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