Simulation study of high injection effects and parasitic barrier formation in SiGe HBTs operating at high current densities

Solid-State Electronics

Volumn 44, Issue 12, 2000, Pages 2239-2246

  Mushini, P ^a   Roenker, K P ^a  

^a 705 Engineering Research Center   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; CURRENT DENSITY; GAIN CONTROL; HOLE TRAPS; SEMICONDUCTING SILICON COMPOUNDS;

BASE-COLLECTOR HETEROJUNCTIONS; HIGH INJECTION EFFECTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034506674     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00201-X     Document Type: Article

References (11)

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