High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects

Microelectronics Reliability

Volumn 43, Issue 9-11, 2003, Pages 1731-1736

  Belhaj, M ^a   Maneux, C ^a   Labat, N ^a   Touboul, A ^a   Bove, P ^b  

^a UNIVERSITÉ BORDEAUX 1   (France)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; ELECTRIC FIELD EFFECTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

BASE COLLECTOR JUNCTIONS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0042694327     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(03)00334-2     Document Type: Conference Paper

References (12)

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