Dynamic formation of a parasitic barrier to electron flow in SiGe HBTs operating at high current densities

Microelectronics Journal

Volumn 31, Issue 5, 2000, Pages 353-358

  Roenker, K P ^a   Mushini, P ^a  

^a 705 Engineering Research Center   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CURRENT DENSITY; ELECTRON TRANSPORT PROPERTIES; SEMICONDUCTING SILICON COMPOUNDS;

ELECTRON FLOW; PARASITIC BARRIERS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033903904     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(99)00153-6     Document Type: Article

References (11)

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