Measurement of electron saturation velocity in Ga 0.52In 0.48P in a double heterojunction bipolar transistor

Journal of Applied Physics

Volumn 91, Issue 3, 2002, Pages 1601-1605

  Yee, M ^a   Houston, P A ^a   David, J P R ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BAND SPIKE; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; ELECTRON SATURATION VELOCITY; ELEVATED TEMPERATURE; GAAS; KIRK EFFECT; POWER APPLICATIONS; PREDICTION OF FREQUENCY; PULSE BIASING; ROOM TEMPERATURE; SELF-HEATING; SERIES RESISTANCES; VOLTAGE DROP;

ALUMINUM GALLIUM ARSENIDE; ELECTRIC RESISTANCE; GALLIUM;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036470536     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1428100     Document Type: Article

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