Temperature-dependent growth of germanium oxide and silicon oxide based nanostructures, aligned silicon oxide nanowire assemblies, and silicon oxide microtubes

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Volumn 1, Issue 4, 2005, Pages 429-438

  Hu, Junqing ^a,b   Jiang, Yang ^a,c   Meng, Xiangmin ^a,d   Lee, Chun Sing ^a   Lee, Shuit Tong ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c HEFEI UNIVERSITY OF TECHNOLOGY   (China)

^d TECHNICAL INSTITUTE OF PHYSICS AND CHEMISTRY   (China)

Author keywords

Germanium; Microstructures; Nanowires; Oxides; Silicon

Indexed keywords

EVAPORATION; LASER ABLATION; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; WIRE; X RAY ANALYSIS;

CARRIER GAS; NANOWIRES; TEMPERATURE-DEPENDENT GROWTH;

GERMANIUM COMPOUNDS;

GERMANIUM; GERMANIUM DIOXIDE; METAL NANOPARTICLE; NANOMATERIAL; NANOTUBE; NANOWIRE; SILICON; SILICON DIOXIDE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; INSTRUMENTATION; METHODOLOGY; NANOTECHNOLOGY; SEMICONDUCTOR; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

CRYSTALLIZATION; GERMANIUM; METAL NANOPARTICLES; MICROSCOPY, ELECTRON, TRANSMISSION; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; NANOTUBES; NANOWIRES; SEMICONDUCTORS; SILICON; SILICON DIOXIDE; TEMPERATURE;

EID: 23944517267     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.200400101     Document Type: Article

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