Formation of Si nanowire by atomic manipulation with a high temperature scanning tunneling microscope

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 4, 1997, Pages 1437-1441

  Hasunuma, R ^a   Komeda, T ^a,c   Mukaida, H ^a   Tokumoto, H ^b,d  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b NATL INST FOR ADV INTERDISC RES   (Japan)

^c Texas Instruments Japan Ltd   (Japan)

^d ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; BOUNDARY CONDITIONS; CURRENT VOLTAGE CHARACTERISTICS; ETCHING; POLYCRYSTALLINE MATERIALS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES; SURFACES; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC MANIPULATION; ELECTROCHEMICAL ETCHING; ELECTROMIGRATION EFFECTS; HIGH TEMPERATURE SCANNING TUNNELING MICROSCOPE; SURFACE DIFFUSION;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0031192988     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589468     Document Type: Article

References (16)

1. T. Komeda, R. Hasunuma, H. Mukaida, and H. Tokumoto, Appl. Phys. Lett. 68, 3482 (1996).
2. R. S. Becker, J. A. Golovchenko, and B. S. Swartzentruber, Nature (London) 325, 419 (1987).
3. I.-W. Lyo and Ph. Avouris, Science 253, 173 (1991).
4. Ph. Avouris, I.-W. Lyo, and Y. Hawegawa, J. Vac. Sci. Technol. A 11, 1725 (1993).
5. Ph. Avouris and I.-W. Lyo, Appl. Surf. Sci. 60, 426 (1992).
6. H. Uchida, D. H. Huang, J. Yoshinobu, and M. Aono, Surf. Sci. 287, 1056 (1993).
7. H. Uchida, D. H. Huang, F. Grey, and M. Aono, Phys. Rev. Lett. 70, 2040 (1993).
8. D. M. Eigler and E. K. Schweizer, Nature (London) 344, 524 (1990).
9. R. M. Feenstra and M. A. Lutz, Surf. Sci. 243, 151 (1991).
10. L. Kuipers and J. W. Frenken, Phys. Rev. Lett. 70, 3907 (1993).
11. J. I. Pascual, J. Méndez, J. Gómez-Herrero, A. M. Baró, N. García, and Vu. Thien Binh, Phys. Rev. Lett. 71, 1852 (1993).
12. A. Ohi, W. Mizutani, and H. Tokumoto, J. Vac. Sci. Technol. B 13, 1252 (1995).
13. A. V. Latyshev, A. L. Aseev, A. B. Krasilnikov, and S. I. Stenin, Surf. Sci. 227, 24 (1990).
14. L. J. Whitman, J. Stroscio, R. A. Dragoset, and R. J. Celotta, Science 251, 1206 (1991).
15. K. Takayanagi, Y. Tanishiro, M. Takahashi, and S. Takahashi, Surf. Sci. 164, 367 (1985).
16. D. Kandel and E. Kaxiras, Phys. Rev. Lett. 76, 1114 (1996).