A physically based, scalable MOS varactor model and extraction methodology for RF applications

IEEE Transactions on Electron Devices

Volumn 52, Issue 7, 2005, Pages 1343-1353

  Victory, James ^a   Yan, Zhixin ^a   Gildenblat, Gennady ^b   McAndrew, Colin ^c   Zheng, Jie ^a  

^a Jazz Semiconductor   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

^c FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

MOS varactors; Surface potential; VVCs

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; INDUCTANCE; MOS DEVICES; SEMICONDUCTOR DEVICE MODELS;

MOS VARACTORS; SURFACE POTENTIAL;

VARACTORS;

EID: 23944474410     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.850693     Document Type: Article

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