Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model

IEEE Transactions on Electron Devices

Volumn 50, Issue 2, 2003, Pages 406-417

  Lallement, Christophe ^a   Sallese, Jean Michel ^b   Bucher, Matthias ^b   Grabinski, Wladek ^c   Fazan, Pierre C ^d  

^a SWISS FEDERAL INSTITUTE OF TECHNOLOGY   (Switzerland)

^b EPFL   (Switzerland)

^c NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

^d MOTOROLA INC   (United States)

Author keywords

Charges modeling; Compact modeling; EKV MOSFET model; Polydepletion effect; Quantum effect

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); POLYSILICON; PRINTED CIRCUIT DESIGN; QUANTUM THEORY;

POLYSILICON DEPLETION; QUANTUM EFFECTS;

MOSFET DEVICES;

EID: 0038056346     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.809040     Document Type: Article

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