An RF model of the accumulation-mode MOS varactor valid in both accumulation and depletion regions

IEEE Transactions on Electron Devices

Volumn 50, Issue 9, 2003, Pages 1997-1999

  Song, Seong Sik ^a   Shin, Hyungcheol ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

Accumulation mode MOS varactor; Channel resistance; CMOS; Quality factor; RF model

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC NETWORK TOPOLOGY; ELECTRIC RESISTANCE; EQUIVALENT CIRCUITS; MOS DEVICES; PARAMETER ESTIMATION; SEMICONDUCTOR DEVICE STRUCTURES;

ACCUMULATION MODE; CHANNEL RESISTANCE; MOS VARACTOR; RADIO FREQUENCY MODEL;

VARACTORS;

EID: 0042411863     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.815599     Document Type: Article

References (9)

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