Analytical approximation for perturbation of MOSFET surface potential by polysilicon depletion layer

Electronics Letters

Volumn 35, Issue 22, 1999, Pages 1974-1976

  Gildenblat, G ^a   Chen, T L ^a   Bendix, P ^b  

^a The Pennsylvania State University   (United States)

^b AGERE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CAPACITANCE; GATES (TRANSISTOR); LINEARIZATION; MATHEMATICAL MODELS; NUMERICAL METHODS; POLYSILANES; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE;

POLYSILICON DEPLETION LAYER; SURFACE POTENTIAL;

MOSFET DEVICES;

EID: 0033340868     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19991325     Document Type: Article

References (6)

1. RIOS, R., ARORA, N.D., and HUANG, C.-L.: 'An analytical polysilicon depletion effect model for MOSFET's', IEEE Electron Device Lett., 1994, 15, pp. 129-131
2. ARORA, N.D., RIOS, R., and HUANG, C.-L.: 'Modeling the polysilicon depletion effect and its impact on submicrometer CMOS circuit performance', IEEE Trans., 1995, ED-42, pp. 935-943
3. LIU, W., JIN, X., KING, Y., and HU, C.: 'An efficient and accurate compact model for thin-oxide-MOSFET intrinsic capacitance considering the finite charge layer thickness', IEEE Trans., 1999, ED-46, pp. 1070-1072
4. GILDENBLAT, G., ARORA, N.D., SUNG, R., and BENDIX, P.: 'Scalable surface potential based compact MOSFET model', Proc. 1997 Int. Device Research Symp., Charlottesville, VA, 1997, pp. 333-336
5. JOARDAR, K., GULLAPALLI, K.K., COLIN, C., MCANDREW, C., BURNHAM, M.E., and WILD, A.: 'An improved MOSFET model for circuit simulation', IEEE Trans., 1998, ED-45, pp. 134-148
6. GILDENBLAT, G., CHEN, T.L., and BENDIX, P.: 'Computationally efficient implementation of the charge sheet model', Electron. Lett., 1999, 35, pp. 843-844