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Volumn 22, Issue 5, 2001, Pages 245-247

A time-dependent, surface potential based compact model for MOS capacitors

Author keywords

MOS capacitors; Semiconductor device modeling; SPICE; Varactors

Indexed keywords

COMPUTER SIMULATION; GATES (TRANSISTOR); MOSFET DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; VARACTORS;

EID: 0035335981     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.919243     Document Type: Article
Times cited : (29)

References (8)
  • 1
    • 0033904349 scopus 로고    scopus 로고
    • A. Porret T. Melly C. C. Enz E. A. Vittoz Design of high-Q varactors for low-power wireless applications using a standard CMOS process IEEE J. Solid State Circuits 35 337 345 Mar. 2000 4 17940 826815
    • (2000) , vol.35 , pp. 337-345
    • Porret, A.1    Melly, T.2    Enz, C.C.3    Vittoz, E.A.4
  • 2
    • 0032639368 scopus 로고    scopus 로고
    • F. Svelto P. Erratico S. Manzini R. Castello A metal-oxide-semiconductor varactor IEEE Electron Device Lett. 20 164 166 Apr. 1999 55 16280 753754
    • (1999) , vol.20 , pp. 164-166
    • Svelto, F.1    Erratico, P.2    Manzini, S.3    Castello, R.4
  • 3
    • 0031639119 scopus 로고    scopus 로고
    • Analysis and optimization of accumulation-mode varactor for RF ICs
    • T. Soorapanth C. Yue D. Shaeffer T. Lee S. Wong Analysis and optimization of accumulation-mode varactor for RF ICs Proc. 1998 Symp. VLSI Circuits 32 33 Proc. 1998 Symp. VLSI Circuits 1998-June 5639 15113 687993
    • (1998) , pp. 32-33
    • Soorapanth, T.1    Yue, C.2    Shaeffer, D.3    Lee, T.4    Wong, S.5
  • 4
    • 0003750001 scopus 로고    scopus 로고
    • Operation and Modeling of the MOS Transistor
    • 2nd McGraw-Hill New York
    • Y. P. Tsividis Operation and Modeling of the MOS Transistor 2nd 1999 McGraw-Hill New York
    • (1999)
    • Tsividis, Y.P.1
  • 5
    • 85177122861 scopus 로고    scopus 로고
    • ISE̵Integrated System Engineering http://www.ise.ch/products$\rightarrow$DESSIS.
  • 6
    • 85177130884 scopus 로고    scopus 로고
    • P. Andreani S. Mattisson On the use of MOS varactors in RF VCOs IEEE J. Solid State Circuits 353 905 910 June 2000 4 18325 845194
    • (2000) , vol.353 , pp. 905-910
    • Andreani, P.1    Mattisson, S.2
  • 7
    • 6344270950 scopus 로고    scopus 로고
    • Modeling of accumulation MOS capacitors for analog design in digital VLSI processes
    • S. Pavan Y. Tsividis K. Nagaraj Modeling of accumulation MOS capacitors for analog design in digital VLSI processes Proc. 1999 ISCAS 202 205 Proc. 1999 ISCAS 1999-May 6311 16899 780130
    • (1999) , pp. 202-205
    • Pavan, S.1    Tsividis, Y.2    Nagaraj, K.3
  • 8
    • 0026384103 scopus 로고
    • A. R. Boothroyd S. W. Tarasewicz C. Slaby MISNAN̵A physically based continuous MOSFET model for CAD applications IEEE Trans. Computer-Aided Design 10 1512 1529 Dec. 1991 43 3200 103501
    • (1991) , vol.10 , pp. 1512-1529
    • Boothroyd, A.R.1    Tarasewicz, S.W.2    Slaby, C.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.