Growth of semi-insulating GaN layer by controlling size of nucleation sites for SAW device applications

MRS Internet Journal of Nitride Semiconductor Research

Volumn 8, Issue , 2003, Pages

  Lee, Jae Hoon ^a   Lee, Myoung Bok ^a   Hahm, Sung Ho ^a   Lee, Yong Hyun ^a   Lee, Jung Hee ^a   Bae, Young Ho ^b   Cho, Hyun Kyung ^c  

^a Kyungpook National University   (South Korea)

^b Uiduk University   (South Korea)

^c Dong A University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC WAVES; ATOMIC FORCE MICROSCOPY; ELECTROMECHANICAL DEVICES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICES; SENSORS; SURFACE PROPERTIES; SURFACE WAVES; THIN FILMS; VELOCITY MEASUREMENT; X RAY DIFFRACTION;

HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (HFET); SAW FILTERS; SEMI INSULATING; WAFERS;

GALLIUM NITRIDE;

EID: 2942751946     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s109257830000048x     Document Type: Article

References (17)

1. S. Nagahama, T. Yanamoto, M. Sano, T. Mukai, Appl. Phys. Lett. 79, 1948 (2001).
2. Y-F. Wu, D. Kapolnet, J. P. Ibbetson, P. Parikh, B. P. Keller, U. K. Mishra, IEEE Electron Dev. Lett. 48, 586 (2001).
3. D. -H. Youn, V. Kumar, J. -H. Lee, R. Schwindt, W. -J. Chang, J. -Y. Hong, C. -M. Jeon, S. -B. Bae, K. -S. Lee, J. -L. Lee, J. -H. Lee, I. Adesida, Electron. Lett. 39, 566 (2003).
4. AF Wright, J. Appl. Phys. 82, 2833-2839 (1997).
5. M.S. Shur, A.D. Bykhovski, R. Gaska, MRS Internet J. Nitride Semicond. Res. 4S1, G1.6 (1999).
6. S. Strite, H. Morkoc, J. Vac. Sci. Technol. B10, 1237-1266 (1992).
7. Suk-Hun Lee, Hwan-Hee Jeong, Sung-Bnm Bae, Hyun-Chul Choi, Jung-Hee Lee, Young-Hyun Lee. IEEE Trans. Electr. Dev. 48, 524 (2001).
8. N. I. Kuznetsov, A. E. Nikolaev, A. S. Zubilov, Yu. V. Melnik, V. A. Dmitriev, Appl. Phys. Lett. 75, 3138 (1999).
9. H. Tang, J. B. We bb, J. A. Bardwell, Raymond, Joseph Salzman, C. Uzan-Saguy, Appl. Phys. Lett. 78, 757 (2001).
10. Sten Heikman, Stacia Keller, Steven P. DenBaars, Umesh K. Mishra, Appl. Phys. Lett. 81 439 (2002).
11. D. C. Look, D. C. Reynolds, R. L. Jones, W. Kim, O. Aktas, A. Botchkarev, A. Salvador, H. Morkoc. Mater. Sci. Eng. B 44, 423 (1997).
12. Z. Bougrioua, I. Moerman, N. Sharma, R. H. Wallis, J. Cheyns, K. Jacobs, E. J. Thrush, L. Considine, R. Beanland, J. L. Farvacque, C. Humphreys, J. Cryst. Growth 230, 573 (2001).
13. O. Briot, J. P. Alexis, S. Sanchez, B. Gil, R. L. Aulombard, Sol. St. Electr. 41, 315 (1997).
14. J. C. Ramer, K. Zheng, C. F. Kranenberg, M. Banas, S. D. Hersee, Mater. Res. Soc. Symp. Proc. 395, 225 (1996).
15. L. Sugiura, K. Itaya, J. Nishio, H. Fujimoto, Y. Kokubun, J. Apyl. Phys. 82, 4877 (1997).
16. U. V. Desnica, M. Pavlovic, Z. -Q. Fang, D. C. Look, J. Appl. Phys. 92, 4126 (2002).
17. J. Oila, K. Saarinen, A. E. Wickenden, D. D. Koleske, R. L. Henry, M. E. Twigg, Appl. Phys. Lett. 82, 1021 (2003).