Strained-Si/SiGe-on-insulator inversion layers: The role of strained-Si layer thickness on electron mobility

Applied Physics Letters

Volumn 80, Issue 22, 2002, Pages 4160-4162

  Gamiz F ^a   Roldan J B ^a   Godoy, A ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM MOLE FRACTION; INVERSION LAYER; LAYER THICKNESS; MONTE CARLO SIMULATION; SIGE-ON-INSULATOR SUBSTRATES; STRAINED-SI; STRAINED-SILICON;

COMPUTER SIMULATION; ELECTRON MOBILITY; GERMANIUM; MONTE CARLO METHODS; SILICON ON INSULATOR TECHNOLOGY;

SILICON;

EID: 79955989222     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1483907     Document Type: Article

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