An analytical model for the electron velocity overshoot effects in strained-Si on Si/sub x/Ge/sub 1-x/ MOSFETs

IEEE Transactions on Electron Devices

Volumn 45, Issue 4, 1998, Pages 993-995

  Roldan, J B ^a   Gamiz, F ^a   Lopez Villanueva, J A ^a   Carceller, J E ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP SUB-MICRON; ELECTRON VELOCITY OVERSHOOT; MONTE CARLO SIMULATORS; MOSFETS; STRAINED-SI; VELOCITY OVERSHOOT EFFECTS;

ANALYTICAL MODELS; MODELS; MONTE CARLO METHODS; MOSFET DEVICES; TRANSCONDUCTANCE;

SILICON;

EID: 0342705880     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.662819     Document Type: Article

References (14)

1. M. Ono, M. Saito, T. Yoshitomi, C. Fiegna, T. Ohguro, and H. Iwai, "A 40-nm gate length n-MOSFET," IEEE Trans. Electron Devices, vol. 42, pp. 1822-1830, 1995.
2. G. A. Sai-Halasz, M. R. Wordeman, D. P. Kern, S. Rishton, and E. Ganin, "High transconductance and velocity overshoot in NMOS devices at the 0.1-m gate-length level," IEEE Electron Device Lett., vol. 9, p. 464, 1988.
3. J. B. Rold́an, F. Ǵamiz, J. A. Ĺopez-Villanueva, and J. E. Carceller, "Modeling effects of electron velocity overshoot in a MOSFET," IEEE Trans. Electron Devices, vol 44, pp. 841-846, 1997.
4. D. Sinitsky, F. Assaderaghi, C. Hu, and J. Bokor, "High field hole velocity and velocity overshoot in silicon inversion layers," IEEE Electron Device Lett., vol. 18, p. 54, 1997.
5. S. Y. Chou, D. A. Antoniadis, and H. I. Smith, "Observation of electron velocity overshoot in sub-100-nm-channel MOSFET's in silicon," IEEE Electron Device Lett., vol. EDL-6 p. 665, 1985.
6. A. Sadek, K. Ismail, M. A. Armstrong, D. A. Antoniadis, and F. Stern, "Design of Si/SiGe heterojunction complementary metal-oxide- .semiconductor transistors," IEEE Trans. Electron Devices, vol. 43, p. 1224, 1996.
7. S. Takagi, J. Hoyt, J. J. Welser, J. F. Gibbons, "Comparative study of phononlimited mobility of two dimensional electrons in strained and unstrained Si metal-oxide-semiconductor field-effect transistors," J. Appl. Phys., vol. 80, p. 1567, 1996.
8. T. Yamada, J. Zhou, H. Miyata, and D. K. Ferry, "Velocity overshoot in a modelation-doped Si/SiGe structure," Semicond. Sci. Technol., vol. 9, pp. 775-777, 1994.
9. T. Vogelsang and R. Hofmann, "Electron transport in strained Si layers on Si1xGex substrates," Appl. Phys. Lett., vol. 63 p. 186, 1993.
10. F. Ǵamiz, J. B. Rold́an, J. A. Ĺopez-Villanueva, and P. Cartujo, "Coulomb scattering in strained-silicon inversion layers on Si1xGex substrates," Appl. Phys. Lett., vol. 69, p. 797, 1996.
11. J. B. Rold́an, F. Ǵamiz, J. A. Ĺopez-Villanueva, and J. E. Carceller, "A Monte Carlo study on the electron-transport properties of highperformance strained-Si on relaxed Si1xGex channel MOSFET's," J. Appl. Phys., vol. 80, pp. 5121-5128, 1996.
12. J. B. Rold́an, F. Ǵamiz, J. A. Ĺopez-Villanueva, and J. E. Carceller, "Dependence of the electron mobility on the longitudinal electric field in MOSFET's," Semicond. Sci. Technol, vol. 12, pp. 321-330, 1997.
13. M. Iwase, T. Mizuno, M. Takahashi, H. Niiyama, M. Fukumoto, K. Ishida, S. Inaba, Y. Takigami, A. Sanda, A. Toriumi, and M. Yoshimi, "High- performance 0.10-m CMOS devices operating at room temperature," IEEE Electron Device Lett., vol. 14, p. 51, 1993.
14. F. Gamiz, J. A. Lopez-Villanueva, J. Banqueri, J. E. Carceller, and P. Cartujo, "Universality of electron mobility curves in MOSFET's: A Monte Carlo study," IEEE Trans. Electron Devices, vol. 42, p. 258, 1995.