Optical band gap measurements of InN films in the strong degeneracy limit

Materials Research Society Symposium - Proceedings

Volumn 743, Issue , 2002, Pages 701-706

  Haddad, D B ^a   Thakur, J S ^b   Naik, V M ^c   Auner, G W ^b   Naik, R ^a   Wenger, L E ^a  

^a WAYNE STATE UNIVERSITY   (United States)

^b Wayne State University   (United States)

^c UNIVERSITY OF MICHIGAN DEARBORN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC VARIABLES MEASUREMENT; ELECTRONS; ENERGY GAP; HALL EFFECT; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; NITRIDES; OPTICAL VARIABLES MEASUREMENT; PLASMA APPLICATIONS; POLYCRYSTALLINE MATERIALS; THIN FILMS; X RAY DIFFRACTION;

BAND GAP MEASUREMENT; ELECTRON DEGENERACY; HALL EFFECT MEASUREMENTS; OPTICAL BAND GAP MEASUREMENTS; PLASMA SOURCE MOLECULAR BEAM EPITAXY; SAPPHIRE SUBSTRATES; WURTZITE POLYCRYSTALLINE; X RAY DIFFRACTION MEASUREMENT;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0038710430     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-743-l11.22     Document Type: Conference Paper

References (23)

1. K. Osamura, S. Naka, and Y. Murakami, J. Appl. Phys. 46, 3432 (1975).
2. T.L. Tansley and C.P. Foley, J. Appl. Phys. 59, 3241 (1986).
3. K. Ikuta, Y. Inoue, O. Takai, Thin Solid Films 334, 49 (1998).
4. T. Inushima, V.V. Mamutin, V.A. Vekshin, S.V. Ivanov, T. Sakon, M. Motokawa, and S. Ohoya, J. Crystal Growth 227-228, 481 (2001).
5. V. Yu Davydov, A.A. Klochikhin, R.P. Seisyan, V.V. Emtsev, S.V. Ivanov, F. Bechstedt, J. Furthmüller, H. Harima, A.V. Mudryi, J. Aderhold, O. Semchinova, and J. Graul, Phys. Stat. Sol. (b) 229, R1 (2002).
6. V. Yu Davydov, A.A. Klochikhin, V.V. Emtsev, S.V. Ivanov, V.V. Vekshin, F. Bechstedt, J. Furthmüller, H. Harima, A.V. Mudryi, A. Hashimoto, A. Yamamoto, J. Aderhold, J. Graul, and E.E. Haller, Phys. Stat. Sol. (b) 230, R4 (2002).
7. J. Wu, W. Walkiewicz, K.M. Yu, J.W. Ager III, E.E. Haller, H. Lu, W.J. Schaff, Y. Saito, and Y. Nanishi, Appl. Phys. Lett. 80, 3967 (2002).
8. T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, and E. Kurimoto, Appl. Phys. Lett. 81, 1246 (2002).
9. C. Persson, R. Ahuja, A. F. da Silva, and B. Johansson, J. Phys. Cond. Matter 13, 8945 (2001).
10. V.A. Tyagai, A.M. Evstigneev, A.N. Krasiko, A.F. Andreeva, and V. Ya Malakhov, Sov. Phys. Semicond. 11, 1257 (1977).
11. J. Wu, W. Walukiewicz, W. Shan, K.M. Yu, J.W. Ager III, E.E. Haller, H. Lu, and W.J. Schaff, Phys. Rev. B. 66, 201403 (2002).
12. G.W. Auner, T.D. Lenane, F. Admad, R. Naik, P.K. Kuo, and Z.L. Wu, in Wide Band Gap Electronic Materials, (Academic, New York, 1995), p. 329.
13. V.M. Naik, W.H. Weber, D. Uy, D. Haddad, R. Naik, Y. V. Danylyuk, M.J. Lukitsch, G.W. Auner, and L. Rimai, Appl. Phys. Lett. 79, 2019 (2001).
14. V. Yu Davydov, V.V. Emtsev, I.N. Goncharuk, A.N. Smirnov, V.D. Petrikov, V.V. Mamutin, V.A. Vekshin, V.S. Ivanov, M.B. Smirnov, and T. Inushima, Appl. Phys. Lett. 75, 3297 (1999).
15. H. Grile, Ch. Schnittler, and F. Bechstedt, Phys. Rev. B 61, 6091 (2000).
16. C. Bungaro, K. Rapzewicz, and J. Bernholc, Phys. Rev. B 61, 6720 (2000).
17. J.S. Dyck, K. Kim, S. Limpijumnong, W.R.L. Lambrecht, K. Kash, and J.C. Angus, Solid State Commun. 114, 355 (2000).
18. B.B. Varga, Phys. Rev. 137, A1896 (1965).
19. I. Hamberg and C.G. Granqvist, J. Appl. Phys. 60, R123 (1986).
20. A. Kasic, M. Schubert, Y. Saito, Y. Nanishi, and G. Wagner, Phys. Rev. B 65, 115206 (2002).
21. L.H. Hall, J. Bardeen, and F.J. Blatt, Phys. Rev. 95, 559 (1954).
22. T.S. Moss, Proc. Phys. Soc. B 67, 775 (1954)
23. E. Burstein, Phys. Rev. 93, 632 (1954).