A selective etching process for chemically inert high-k metal oxides

Materials Research Society Symposium - Proceedings

Volumn 745, Issue , 2002, Pages 79-84

  Saenger, Katherine L ^a   Okorn Schmidt, Harald F ^a   D'Emic, Christopher P ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; HAFNIUM COMPOUNDS; ION BOMBARDMENT; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REACTIVE ION ETCHING; SEMICONDUCTING FILMS; WETTING;

DEWETTING;

MOS DEVICES;

EID: 0037504342     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-745-n3.9     Document Type: Conference Paper

References (6)

1. L. Liu, K.L. Pey, and P. Foo,"HF wet etching of oxide after ion implantation," Proceedings 1996 IEEE Hong Kong Electron Devices Meeting, 29 June 1996.
2. K.C. Jain and B.A. Maclver, "Method for patterning silicon dioxide with high resolution in three dimensions," U.S. Patent 4,652,334, issued March 24, 1987.
3. 2 films by implant processing," Proceedings of UCPSS Ultra Clean Processing Technology 16 September 16, 2002, Oostende, Belgium (http://ucpss.com/programme.htm).
4. H.F. Okorn-Schmidt et al., in preparation.
5. 2 Interface - 4 H.Z. Massoud et al., Edit., Proc. Vol. 2000-2, The Electrochemical Society, Pennington, NJ, 2000).
6. H.F. Okorn-Schmidt, "Characterization of silicon surface preparation processes for advanced gate dielectrics," IBM J. Res. Develop. 43 351 (1999).