Effects of reactive ion etching on the electrical characteristics of GaN

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 6, 2000, Pages 3467-3470

  Rong, B ^a   Cheung, R ^b   Gao, W ^b   Alkaisi, M M ^a   Reeves, R J ^a  

^a UNIVERSITY OF CANTERBURY   (New Zealand)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ELECTRIC RESISTANCE; GATES (TRANSISTOR); GOLD; NITRIDES; NITROGEN; OHMIC CONTACTS; PLASMA ETCHING; REACTIVE ION ETCHING; SCHOTTKY BARRIER DIODES;

GALLIUM NITRIDES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034314867     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1320799     Document Type: Article

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