High-rate deposition of hydrogenated amorphous silicon films using inductively coupled silane plasma

Solar Energy Materials and Solar Cells

Volumn 66, Issue 1-4, 2001, Pages 337-343

  Sakikawa, Nobuki ^a   Shishida, Yoshinori ^a   Miyazaki, Seiichi ^a   Hirose, Masataka ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; DEFECTS; DEPOSITION; HYDROGENATION; PLASMA APPLICATIONS;

DEFECT DENSITY; HYDROGENATED AMORPHOUS SILICON; INDUCTIVELY COUPLED PLASMA;

AMORPHOUS SILICON;

EID: 0035253922     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(00)00192-6     Document Type: Article

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