Reliable poly-Si TFT employing XeCl excimer laser irradiation on gate oxide

Physica Scripta T

Volumn T114, Issue , 2004, Pages 199-201

  Lee, Jae Hoon ^a   Shin, Moon Young ^a   Moon, Kook Chul ^a   Han, Min Koo ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EXCIMER LASERS; LASER BEAM EFFECTS; POLYSILICON; SILICA; XENON;

ELECTRICAL STRESS; LASER IRRADIATION ON THE GATE OXIDE (LIGO); POLYCRYSTALLINE SILICON THIN FILM TRANSISTOR (POLY-SI TFT); XECL EXCIMERS;

THIN FILM TRANSISTORS;

EID: 23144460947     PISSN: 02811847     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1088/0031-8949/2004/T114/050     Document Type: Conference Paper

References (8)

1. Kim C H, Song I H and Han M K 2002 IEEE Electron Device Lett. 23 315
2. Oshima H and Morozumi S 1989 Int. Electron Devices Meeting IEDM p 157
3. Sano N, Sekiya M, Hara M, Kohno A and Sameshima T 1995 IEEE Electron Device Lett. 16 157
4. Lee J, Han C and Kim C 1994 Int. Electron Devices Meeting IEDM p 523
5. Moon K C, Lee J H and Han M K 2002 IEEE Trans. Electron Devices 49 1319
6. Wolf S and Tauber R N 1987 Silicon processing for the VLSI era (Lattice Press, California) p 184
7. Schroder D K 1998 Semiconductor material and device characterization (John Wiley & Sons, New York) p 368
8. Jeon J H, Lee M C, Park K C and Han M K 2001 IEEE Electron Device Lett. 22 429