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8
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22244449410
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L. D. Landau and E. M. Lifshitz, Fluid Mechanics, 2nd ed. (Pergamon, New York, 1987), Sec. 62, p. 247
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L. D. Landau and E. M. Lifshitz, Fluid Mechanics, 2nd ed. (Pergamon, New York, 1987), Sec. 62, p. 247.
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9
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22244440900
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S.C. Hardy, in Properties of Silicon, edited by T. K. Ning and C. Hilsum, (INSPEC, New York, 1988), p. 58
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S.C. Hardy, in Properties of Silicon, edited by T. K. Ning and C. Hilsum, (INSPEC, New York, 1988), p. 58.
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22244442820
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J. C. Brice, ibid., p. 55
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J. C. Brice, ibid., p. 55.
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22244491737
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V. M. Glazov, S. N. Chizhevskaya, and N. N. Glagoleva, Liquid Semiconductors (Plenum, New York, 1969), p. 331.
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12
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22244438630
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The reader can see this by picturing isotropically expanding circles from three noncolinear points
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The reader can see this by picturing isotropically expanding circles from three noncolinear points.
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13
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3643078539
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A. G. Cullis, H. C. Weber, N. G. Chew, J. M. Poate, and P. Baeri, Phys. Rev. Lett. 49, 219 (1982).
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14
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22244477510
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Other factors force the same conclusion; for example, with multishot crystallization, some grains become so large that growth from a central point within the measured melt time would require lateral crystallization speeds in excess of the amorphization threshold
-
Other factors force the same conclusion; for example, with multishot crystallization, some grains become so large that growth from a central point within the measured melt time would require lateral crystallization speeds in excess of the amorphization threshold.
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15
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22244436364
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L. L. Kazmerski, ''Electrical Properties of Polycrystalline Semiconductor Thin Films'', Chap. 3 in Polycrystalline and Amorphous Thin Films and Devices, edited by L. L. Kazmerski (Academic, New York, 1980)
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L. L. Kazmerski, ''Electrical Properties of Polycrystalline Semiconductor Thin Films'', Chap. 3 in Polycrystalline and Amorphous Thin Films and Devices, edited by L. L. Kazmerski (Academic, New York, 1980).
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